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philips semiconductors sa5223 wide dynamic range agc transimpedance amplifier (150mhz) product specification 1995 oct 24 integrated circuits ic19 data handbook
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 2 1995 oct 24 853-1816 15939 description the sa5223 is a wide-band, low-noise transimpedance amplifier with differential outputs, incorporating agc and optimized for signal recovery in wide-dynamic-range fiber optic receivers, such as sonet. the part is also suited for many other rf and fiber optic applications as a general purpose gain block. the sa5223 is the first agc amplifier to incorporate internal agc loop hold capacitor, therefore, no external components are required. the internal agc loop enables the sa5223 to effortlessly handle bursty data over a range of na to ma of signal current, positive direction (sinking) only. features ? extremely low noise: 1.17pa hz ? single 5v supply ? low supply current: 22ma ? large bandwidth: 150mhz ? differential outputs ? internal hold capacitor ? low input/output impedances ? high power-supply-rejection ratio: 55db ? tight transresistance control ? high input overload: 4ma ? 2000v hbm esd protection pin description d package in gnd 2 out v cc 1 2 3 4 8 7 6 5 out gnd 4 gnd 3 gnd 1 sd00369 applications ? oc3 sonet preamp (see an1431 for detailed analysis ? current-to-voltage converters ? wide-band gain block ? medical and scientific instrumentation ? sensor preamplifiers ? single-ended to differential conversion ? low noise rf amplifiers ? rf signal processing ordering information description temperature range order code dwg # 8-pin plastic small outline -40 to +85 c sa5223d sot96-1 for unpackaged die please contact factory. absolute maximum ratings symbol parameter rating units v cc power supply voltage 6 v t a ambient temperature range -40 to +85 c t j junction temperature range -55 to +150 c t stg storage temperature range -65 to +150 c p d power dissipation t a = 25 o c (still air) 1 0.78 w i inmax maximum input current 5 ma note: 1. maximum power dissipation is determined by the operating ambient temperature and the thermal resistance q ja = 158 o c/w. derate 6.2mw/ c above 25 c. recommended operating conditions symbol parameter rating units v cc power supply voltage 4.5 to 5.5 v t a ambient temperature range: sa grade -40 to +85 c t j junction temperature range: sa grade -40 to +105 c
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 3 dc electrical characteristics typical data and min and max limits apply at t a = 25 c, and v cc = +5v, unless otherwise specified. symbol parameter test conditions sa5223 unit symbol parameter test conditions min typ max unit v in input bias voltage 1.3 1.55 1.8 v v o output bias voltage 2.9 3.2 3.5 v v os output offset voltage (v pin6 - v pin7 ) -200 80 +200 mv i cc supply current 15 22 29 ma i omax output sink/source current 1.5 2 ma note: standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product. ac electrical characteristics typical data and min and max limits apply at t a = 25 c and v cc = +5v, unless otherwise specified. symbol parameter test conditions sa5223 unit symbol parameter test conditions min typ max unit r t transresistance (differential output) dc tested, r l = , i in = 0-1 m a 90 125 160 k w r t transresistance (single-ended output) dc tested, r l = , i in = 0-1 m a 45 62.5 80 k w r o output resistance (differential output) dc tested 140 w r o output resistance (single-ended output) dc tested 70 w f 3db bandwidth (-3db) test circuit 1 110 150 mhz r in input resistance dc tested 250 w c in input capacitance 1 0.7 pf c int input capacitance including miller multiplied capacitance 4.0 pf d r/ d v transresistance power supply sensitivity v cc1 = v cc2 = 5 0.5v 3 %/v d r/ d t transresistance ambient temperature sensi- tivity d t a = t a max - t a min 0.09 %/ o c i in rms noise current spectral density (referred to input) 2 test circuit 2, f = 10mhz 1.17 pa hz integrated rms noise current over the band- idth (referred to inp t) test circuit 2, d f = 50mhz 7 w idth ( re f erre d t o i npu t) c s = 0.1 p f d f = 100mhz 12 i t c s = 0 . 1f d f = 150mhz 16 na t d f = 50mhz 8 c s = 0.4pf d f = 100mhz 13 d f = 150mhz 18 psrr power supply rejection ratio (change in v os ) dc tested, d v cc = 0.5v 55 db psrr power supply rejection ratio 3 f = 1.0mhz, test circuit 3 20 db v olmax maximum differential output ac voltage i i = 02ma peak ac 800 mv dr t dt agc loop time constant parameter 4 10 m a to 20 m a steps 1 db/ms i inmax maximum input amplitude for output duty cycle of 50 5% test circuit 4 +2 ma t r , t f output rise and fall times 10 90% 2.2 ns t d group delay f = 10mhz 2.2 ns notes: 1. does not include miller-multiplied capacitance of input device. 2. noise performance measured differential. single-ended output noise is higher due to cm noise. 3. psrr is output referenced and is circuit board layout dependent at higher frequencies. for best performance use a rf filter in v cc line. 4. this implies that the sa5223 gain will change 1db (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading bit error rate (ber) for 100,000 cycles at 100mhz).
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 4 test circuits test circuit 1: bandwidth network analyzer s-parameter test set port1 port2 v cc .1uf .1uf 50 z o = 50 w out out in dut 0.1uf r=1k 50 gnd 1 single-ended gnd 2 r tse 12.4 s 21 r in ,r in 1k r inss 1250 z o = 50 w sd00370 500 500 test circuit 2: noise spectrum analyzer v cc out out in dut gnd 2 gnd 1 ne5209 50 w .1 m f .1 m f 1.0 m f 1.0 m f c s 50 w sd00371 network analyzer s-parameter test set port1 port2 v cc .1uf .1uf out out in dut gnd 2 gnd 1 50 w cal unbal. 0.1uf nc 50 w bias tee 5v nho300hb transformer conversion loss = 9db 100 w bal. sd00372 test circuit 3: psrr test circuit 4: duty cycle distortion pulse gen out out dut oscilloscope a b meaurement done using differential wave forms 5v 0.1uf .1 m f .1 m f gnd 1 gnd 2 z o = 50 w z o = 50 w in 500 w 500 w 1k w 50 w offset sd00373 50% duty cycle
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 5 1 2 3 4 8 7 6 5 sd00507 gnd g1 in v cc out outb g2 gnd pad center locations x(mm) y(mm) gnd1 -0.400 -0.053 in -0.400 -0.223 gnd2 +0.400 -0.342 out +0.400 -0.046 outb +0.400 +0.154 v cc +0.400 +0.380 die size x(mm) y(mm) 1.08 1.32 nc nc nc figure 1. sa5223 bonding diagram die sales disclaimer due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. all die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25 c), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, it is impossible to guarantee 100% functionality through this process. there is no post waffle pack testing performed on individual die. since philips semiconductors has no control of third party procedures in the handling or packaging of die, philips semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. although philips semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. however, for the reasons stated above, philips semiconductors cannot guarantee this or any other yield on any die sales.
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 6 top plane bottom plane +5v l1 10uh r1 100 r2 0 c2 0.1uf c1 0.1uf c3 0.1uf d1* u1 1 2 3 4 8 7 6 5 gnd3 gnd1 in gnd4 vcc out out gnd2 sa5223 *d1: 1a358 = 1300nm abb hafo 1.5ghz pin diode analog gnd digital gnd w l w r3 120 w r4 120 w c4 4.7pf c6 0.1uf c8 0.1uf c9 0.1uf +5v + c10 4.7uf 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 u2 ne5224 l2 10uh c5 0.1uf c8 0.1uf cazn cazp gnda d_in d_in vcca cf jam vset vref vcce d_out d_out gnd_e st st +5v r6 130 r7 82 c11 0.1uf +3.2v r5 5 r10 130 dout dout r9 82 c12 0.1uf +5v r8 5 r11 3k r12 1.8k c13 0.1uf w w w w w w w w sd00521 figure 2. sonet test board e 155mb/s (1300nm)
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 7 top view bottom view d1 u1 +5v gnd gnd c2 r1 c1 r2 c3 sa5223/5224 sonet 155mb/s fo11000 l1 gnd gnd +5v u2 c10 dout dout r12 c12 r6 r7 r8 r10 r9 r5 c11 c13 r11 c8 c9 l2 c4 c6 c7 c5 r3 r4 sd00522 figure 3. sa5223 board layout (not actual size)
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 8 28.00 26.00 24.00 22.00 20.00 18.00 16.00 -50 -25 0 25 50 75 100 temperature ( c) v cc = 5.5v v cc = 5.0v v cc = 4.5v supply current (ma) sd00527 figure 4. sa5223 i cc vs temperature 1.900 -50 -25 0 25 50 75 100 temperature ( c) supply current (ma) 1.800 1.700 1.600 1.500 1.400 1.300 1.200 v cc = 5.5v v cc = 5.0v v cc = 4.5v sd00528 figure 5. sa5223 input v bias vs temperature 3.800 -50 -25 0 25 50 75 100 temperature ( c) output v (v) 3.600 3.400 3.200 3.000 2.800 2.600 bias v cc = 5.5v v cc = 5.0v v cc = 4.5v sd00529 figure 6. sa5223 output v bias vs temperature 100 -50 -25 0 25 50 75 100 temperature ( c) v (mv) v cc = 5.5v v cc = 5.0v v cc = 4.5v 90 80 70 60 50 40 os v os = (i in = 0) = v out v out r l = infinity sd00530 figure 7. sa5223 output v os vs temperature 3.500 0123456 dc input current ( m a) v (v) v out v out out 3.400 3.300 3.200 3.100 3.000 2.900 7 8910 r l = infinity v cc = 5.0v, temperature = 25 c sd00531 figure 8. sa5223 output voltage vs dc input current (for small input current) 4.200 1 10 100 1000 10000 dc input current ( m a log) v (v) out v out 4.000 3.800 3.600 3.400 3.200 3.000 2.800 2.600 2.400 2.200 2.000 r l = infinity v cc = 5.0v, temperature = 25 c sd00532 v out figure 9. sa5223 output voltage vs dc input current (for large input current)
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 9 0.350 0123456 dc input current ( m a) v (v) od 7 8910 0.300 0.250 0.200 0.150 0.100 0.050 0.000 r l = infinity sd00533 v od = v out v out v os v cc = 5.0v, temperature = 25 c figure 10. sa5223 differential output vs dc i in (for small input current) 1.800 dc input current ( m a, log) v (v) od 1.600 1.400 1.200 1.000 0.800 0.600 0.400 0.200 0.000 1 10 100 1000 10000 sd00534 r l = infinity v od = v out v out v os v cc = 5.0v, temperature = 25 c figure 11. sa5223 differential output vs dc i in 160 012345 6 dc input current ( m a) 85 c rt (k ) 140 120 100 80 60 40 20 0 78910 25 c -40 c w r l = infinity sd00535 rt = v od / i in v cc = 5.0v temperature = -40, 25, 85 c figure 12. sa5223 differential rt vs dc i in (for small input current) 1000 1 10 100 1000 10000 100 10 1 0 dc input current ( m a log) 25 c r l = infinity rt (k , log) w sd00536 rt = v od / i in v cc = 5.0v temperature = -40, 25, 85 c 85 c -40 c figure 13. sa5223 differential rt vs dc i in (for large input current) 160 0123456 dc input current ( m a) rt (k ) 140 120 100 80 60 40 20 0 78910 w r l = infinity v cc = 5.0v sd00537 rt = v od / i in v cc = 5.0v temperature = 25 c v cc = 4.5v v cc = 5.5v figure 14. sa5223 differential rt vs dc i in (for small input current) 1000 1 10 100 1000 10000 100 10 1 0 dc input current ( m a log) 25 c rt (k , log) w sd00538 r l = infinity rt = v od / i in v cc = 4.5, 5.0, 5.0v temperature = 25 c 85 c -40 c figure 15. sa5223 differential rt vs dc i in (for large input current)
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier(150mhz) 1995 oct 24 10 16 1 10 100 300 14 12 10 8 6 4 2 0 -2 -4 frequency (mhz) 85 c 25 c -40 c v cc = 5.0v 0 c 70 c single-ended output s (db) 21 sd00539 figure 16. insertion gain vs frequency 16 1 10 100 300 14 12 10 8 6 4 2 0 -2 -4 frequency (mhz) v cc = 5.5v temperature = 25 c single-ended output v cc = 5.0v v cc = 4.5v s (db) 21 sd00540 figure 17. insertion gain vs frequency 9 8 7 6 5 4 3 2 1 0 -1 start = 1mhz stop = 200mhz frequency (mhz, linear) s group delay (ns) 21 single-ended output vcc = 5.0v temperature = 25 c sd00541 figure 18. group delay vs frequency 10.0 1 10 100 300 frequency (mhz) v cc = 5.0v temperature = 25 c input noise (pa/ hz) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 sd00542 c s = 0pf figure 19. sa5223 input current rms noise spectral density
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier (150mhz) 1995 oct 24 11 so8: plastic small outline package; 8 leads; body width 3.9mm sot96-1
philips semiconductors product specification sa5223 wide dynamic range agc transimpedance amplifier (150mhz) 1995 oct 24 12 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the dev ice at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limi ting values for extended periods may affect device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support e these products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use i n such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors ass umes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or m ask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right in fringement, unless otherwise specified. philips semiconductors 811 east arques avenue p.o. box 3409 sunnyvale, california 940883409 telephone 800-234-7381 ? copyright philips electronics north america corporation 2000 all rights reserved. printed in u.s.a. date of release: 08-98 document order number: 9397 750 06831

data sheet status objective specification preliminary specification product specification product status development qualification production definition [1] this data sheet contains the design target or goal specifications for product development. specification may change in any manner without notice. this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. this data sheet contains final specifications. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. data sheet status [1] please consult the most recently issued datasheet before initiating or completing a design.

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